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MTB60N06HD |
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| Part Number | MTB60N06HD |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTB60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design al... |
| Features |
e
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
VDSS VDGR
VGS VGSM
ID ID IDM PD
60
60
± 20 ± 30
60 42.3 180
125 1.0 2.5
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance − Junction to C... |
| Document |
 MTB60N06HD Data Sheet
PDF 274.96KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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