MRFG35003MT1 Transistor Datasheet, Distribuidor, stock y mejor precio

Part Number	MRFG35003MT1
Manufacturer	Freescale Semiconductor
Title	RF Power Field Effect Transistors
Description	3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Capacitors 1.0 pF Chip Capacitor 15.0 pF Chip Capacitor 4.7 nH Chip Inductor 8.2 nH Chip Inductor 75 W,.
Features	PCH (8.5 dB P/A @ 0.01% Probability) Output Power — 350 mWatt Power Gain — 12.5 dB Efficiency — 26% MRFG35003NT1 MRFG35003MT1 BWA BWA 2.4 - 2.5 GHz VGG VDD BIAS BIAS RF INPUT MATC H RF OUTPUT MATC H MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hooper This reference design is designed to demonstrate the typical RF performance characteristics of the.

No.	Parte #	Fabricante	Descripción
1	MRFG35003M6T1	Motorola	RF Power Field Effect Transistor
2	MRFG35003N6T1	Freescale Semiconductor	RF Power Field Effect Transistor
3	MRFG35003NT1	Freescale Semiconductor	RF Power Field Effect Transistors
4	MRFG35002N6AT1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor
5	MRFG35002N6T1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor
6	MRFG35005MT1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor
7	MRFG35005NT1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor
8	MRFG35010	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor
9	MRFG35010ANT1	Freescale Semiconductor	RF Power Field Effect Transistor
10	MRFG35010AR1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35003MT1 Datasheet. existencias, precio