MRFG35003MT1 Freescale Semiconductor Transistors, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRFG35003MT1

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Part Number	MRFG35003MT1
Manufacturer	Freescale Semiconductor
Description	3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Cap...
Features	PCH (8.5 dB P/A @ 0.01% Probability) Output Power — 350 mWatt Power Gain — 12.5 dB Efficiency — 26% MRFG35003NT1 MRFG35003MT1 BWA BWA 2.4 - 2.5 GHz VGG VDD BIAS BIAS RF INPUT MATC H RF OUTPUT MATC H MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hooper This reference design is designed to demonstrate the typical RF performance characteristics of the MRFG35003NT1(MT1) when applied for the 2.4 - 2.5 GHz W - CDMA frequency band. The reference design is tuned for the best tradeoff between good W - CDMA linearity and good power capability and efficie...
Document	MRFG35003MT1 Data Sheet PDF 128.28KB

No.	Parte #	Fabricante	Descripción
1	MRFG35003MT1	Motorola	RF Power Field Effect Transistor
2	MRFG35003M6T1	Motorola	RF Power Field Effect Transistor
3	MRFG35003N6T1	Freescale Semiconductor	RF Power Field Effect Transistor
4	MRFG35003NT1	Freescale Semiconductor	RF Power Field Effect Transistors
5	MRFG35002N6AT1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor
6	MRFG35002N6T1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor