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| Part Number | MRF313 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MRF313 |
| Manufacturer | ASI |
| Title | NPN SILICON RF TRANSISTOR |
| Description | The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VCBO 40 V VCEO 30 V VEBO PDISS TJ TSTG θJC 3.0 V 6.1 W @ TC = 25 OC -65 . |
| Features |
• PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VCBO 40 V VCEO 30 V VEBO PDISS TJ TSTG θJC 3.0 V 6.1 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 28.5 OC/W PACKAGE STYLE .200" 4L PILL CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 10 mA BVCBO IC = 0.1 mA BVEBO IE = 1.0 m. |
| Part Number | MRF313 |
| Manufacturer | MA-COM |
| Title | The RF Line NPN Silicon High-Frequency Transistor |
| Description | MRF313 The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 V, 400 MHz characteristics — Output power = 1.0 W Power gain = 15 dB min. Efficiency = 45% typ. • Emi. |
| Features | . |
| Part Number | MRF313 |
| Manufacturer | Tyco Electronics |
| Title | HIGH-FREQUENCY TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF313/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt P. |
| Features |
erwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICEO 30 3. |
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Desde 2024. D4U Semiconductor.
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