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MRF313 |
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| Part Number | MRF313 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF313/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in ... |
| Features |
unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICEO 30 35 35 3.0 — — — — — — — — — — 1.0 Vdc Vdc Vdc Vdc mAdc (continued) RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF313 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise... |
| Document |
 MRF313 Data Sheet
PDF 63.27KB |
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