Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | ON Semiconductor |
| Title | High Voltage Transistors |
| Description | MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA43 MPSA42 VCEO 200 300 Vdc Collector −Base Voltage MPSA43 MPSA42 VCBO 200 300 Vdc Emitter −Base Voltage Collector Current . |
| Features |
• These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA43 MPSA42 VCEO 200 300 Vdc Collector −Base Voltage MPSA43 MPSA42 VCBO 200 300 Vdc Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.0 Vdc 500 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate ab. |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | NTE |
| Title | Silicon Transistors |
| Description | MPSA42 Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collecto. |
| Features | Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristic. |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | CDIL |
| Title | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| Description | SYMBOL MPSA42 MPSA43 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC . |
| Features | . |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Epitaxial Planar Transistor |
| Description | MPSA 42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. On special request, these transistors. |
| Features | . |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | Fairchild |
| Title | NPN High Voltage Amplifier |
| Description | MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier October 2014 MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Features • This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48. MPSA42 MMBTA42 C PZTA42 C EBC TO-92 . |
| Features |
• This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48. MPSA42 MMBTA42 C PZTA42 C EBC TO-92 E B SOT-23 Mark: 1D E C B SOT-223 Ordering Information Part Number MPSA42 MMBTA42 PZTA42 Top Mark MPSA42 1D A42 Package TO-92 3L SOT-23 3L SOT-223 4L Packing Method Bulk Tape and Reel Tape and Reel Absolute Maximum Ratings(1). |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | Siemens |
| Title | NPN Silicon High-Voltage Transistors |
| Description | NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 q q q High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 92 MPSA 93 (PNP) 1 32 Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code 1 Q68000-A413 Q68000-A4809 E Pin Configuration 2 B 3 C Packag. |
| Features |
racteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 MPSA 42 MPSA 43 Collector-base breakdown voltage IC = 100 µA, IB = 0 MPSA 42 MPSA 43 Emitter-base breakdown voltage Limit Values typ. max. Unit
V(BR)CE0
300 200 – – – – – – – – – – V V(BR)CB0 300 200 IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 °C VCB = 160 V, TA = 150 °C Emitt. |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | TRANSYS |
| Title | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| Description | SYMBOL MPSA42 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction t. |
| Features | lector-Cut off Current VCB=160V, IE=0 IEBO VEB=6V, IC=0 <100 Emitter-Cut off Current VEB=4V, IC=0 hFE* IC=1mA,VCE=10V >25 DC Current Gain IC=10mA,VCE=10V >40 IC=30mA,VCE=10V >40 <0.5 Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA VBE(Sat) * IC=20mA,IB=2mA <0.9 Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product Collector Base Capacitance . ft Ccb I. |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | MCC |
| Title | NPN Silicon High Voltage Transistor |
| Description | MCC Micro Commercial Components MPSA42 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MPSA43 NPN Silicon High Voltage Transistor 625mW TO-92 THRU Features Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-. |
| Features | Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Mechanical Data Case: TO-92, Molded Plastic Marking: MPSA42 ----A42 MPSA43 ----MPSA43 A E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter. |
MPSA42 |
| Part Number | MPSA42 |
| Manufacturer | Weitron |
| Title | NPN SiliconGeneral Purpose Transistors |
| Description | MPSA42 NPN Silicon General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC TJ, Tstg RӨJA RӨJC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction and . |
| Features | pecified) MIN 310 305 5 0.25 0.1 60 80 75 0.2 0.9 50 V V MHz 250 TYP MAX UNIT V V V µA µA conditions Ic=100uA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA,f=30MHZ CLASSIFICATION OF hFE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250 WEITRON http://www.weitron.com.tw Free D. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MPSA42 |
Central Semiconductor |
SILICON HIGH VOLTAGE NPN TRANSISTORS |
|
| 2 | MPSA42 |
Philips |
NPN high-voltage transistors |
|
| 3 | MPSA42 |
Motorola |
High Voltage Transistors |
|
| 4 | MPSA42 |
UTC |
NPN TRANSISTOR |
|
| 5 | MPSA42 |
NXP |
NPN high-voltage transistors |
|
| 6 | MPSA42 |
General Semiconductor |
Small Signal Transistors |
|
| 7 | MPSA42 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 8 | MPSA42 |
TAITRON |
Small Signal High Voltage Transistors |
|
| 9 | MPSA42D |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | MPSA42G |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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Desde 2024. D4U Semiconductor.
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