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| Part Number | MPS751 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MPS751 |
| Manufacturer | SeCoS |
| Title | PNP Plastic Encapsulated Transistor |
| Description | Elektronische Bauelemente MPS751 -2A , -80V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplifier applications TO-92 2 Base Collector 3 1 Emitter 1Emitter 2Base 3Collect REF. A B C D E Millimeter Min. Max. 4. |
| Features | Switching and amplifier applications TO-92 2 Base Collector 3 1 Emitter 1Emitter 2Base 3Collect REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 14.5 3.30 3.81 0.36 0.56 REF. F G H J Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Vo. |
| Part Number | MPS751 |
| Manufacturer | Central Semiconductor |
| Title | SILICON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MPS650, MPS750 series devices are complementary silicon transistors designed for general purpose amplifier and switching applications requiring high gain at high collector current. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYM. |
| Features | IB=200mA VBE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=2.0V, IC=1.0A hFE VCE=2.0V, IC=50mA hFE VCE=2.0V, IC=500mA hFE VCE=2.0V, IC=1.0A hFE VCE=2.0V, IC=2.0A fT VCE=5.0V, IC=50mA, f=100MHz MPS650 MPS750 MIN MAX - 100 -- 100 60 40 5.0 - 0.3 - 0.5 - 1.2 - 1.0 75 75 75 40 75 - MPS651 MPS751 MIN MAX -- 100 - 100 80 60 5.0 - 0.3 - 0.5 - 1.2 - 1.0 75 75 75 40 75 - UNITS V V V A mW W °C °C/W °C/W UNI. |
| Part Number | MPS751 |
| Manufacturer | CDIL |
| Title | PNP SILICON PLANAR AMPLIFIER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @Ta=25 degC Derate Above 25deg C Power Dissipation @Tc=25 degC Derate Above 25deg C Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg MPS65. |
| Features | . |
| Part Number | MPS751 |
| Manufacturer | Korea Electronics |
| Title | EPITAXIAL PLANAR PNP TRANSISTOR |
| Description | . |
| Features | . |
| Part Number | MPS751 |
| Manufacturer | Fairchild Semiconductor |
| Title | Silicon PNP Transistor |
| Description | MPS751 MPS751 Silicon PNP Transistor (Note 1) • Low Saturation Voltage 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Ta=25°C) (Note 2, 3). |
| Features | E(on) fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings. |
| Part Number | MPS751 |
| Manufacturer | ON Semiconductor |
| Title | Amplifier Transistors |
| Description | NPN - MPS650, MPS651; PNP - MPS750, MPS751 Amplifier Transistors Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751 VCE Value 40 60 Unit Vdc Collector −Base Voltage VCB Vdc MPS650; MPS750 60 MPS651; MPS751 80 Emi. |
| Features |
• These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751 VCE Value 40 60 Unit Vdc Collector −Base Voltage VCB Vdc MPS650; MPS750 60 MPS651; MPS751 80 Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VEB 5.0 Vdc IC 2.0 Adc PD 625 mW 5.0 mW/°C Total Power Dissipation @. |
| Part Number | MPS751 |
| Manufacturer | Motorola |
| Title | (MPS750) Amplifier Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS650/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS650 MPS651 * PNP MPS750 MPS751 * Voltage and current are negative for PNP transistors *Motorola Preferred Devices MAXIMUM RATINGS . |
| Features |
racteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter – Base Breakdown Voltage (IC = 0, IE = 10 µAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MPS750 |
CDIL |
PNP SILICON PLANAR AMPLIFIER TRANSISTORS |
|
| 2 | MPS750 |
Motorola |
(MPS751) Amplifier Transistors |
|
| 3 | MPS750 |
ON Semiconductor |
Amplifier Transistors |
|
| 4 | MPS750 |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 5 | MPS760 |
BOWEI |
Fixecd PLL synthesizer |
|
| 6 | MPS |
RUBYCON CORPORATION |
METALLIZED POLYPROPYLENE FILM CAPACITORS |
|
| 7 | MPS-2300 |
Metrodyne |
Pressure Sensor |
|
| 8 | MPS-2303 |
Metrodyne |
Pressure Sensor |
|
| 9 | MPS-2303 |
Metrodyne |
Pressure Sensor |
|
| 10 | MPS-2307 |
Metrodyne |
Pressure Sensor |
|
Desde 2024. D4U Semiconductor.
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