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| Part Number | MPS750 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MPS750 |
| Manufacturer | CDIL |
| Title | PNP SILICON PLANAR AMPLIFIER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @Ta=25 degC Derate Above 25deg C Power Dissipation @Tc=25 degC Derate Above 25deg C Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg MPS65. |
| Features | . |
| Part Number | MPS750 |
| Manufacturer | Motorola |
| Title | (MPS751) Amplifier Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS650/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS650 MPS651 * PNP MPS750 MPS751 * Voltage and current are negative for PNP transistors *Motorola Preferred Devices MAXIMUM RATINGS . |
| Features |
racteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter – Base Breakdown Voltage (IC = 0, IE = 10 µAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2. |
| Part Number | MPS750 |
| Manufacturer | ON Semiconductor |
| Title | Amplifier Transistors |
| Description | NPN - MPS650, MPS651; PNP - MPS750, MPS751 Amplifier Transistors Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751 VCE Value 40 60 Unit Vdc Collector −Base Voltage VCB Vdc MPS650; MPS750 60 MPS651; MPS751 80 Emi. |
| Features |
• These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751 VCE Value 40 60 Unit Vdc Collector −Base Voltage VCB Vdc MPS650; MPS750 60 MPS651; MPS751 80 Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VEB 5.0 Vdc IC 2.0 Adc PD 625 mW 5.0 mW/°C Total Power Dissipation @. |
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