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| Part Number | MMBTA64 |
| Distributor | Stock | Price | Buy |
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| Part Number | MMBTA64 |
| Manufacturer | MCC |
| Title | PNP Darlington Transistor |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBTA63 MMBTA64 Features • This device is designed for applications requiring extremely high current gain at 500mA. • Marking : MMBTA63: 2U MMBTA6. |
| Features |
• This device is designed for applications requiring extremely high current gain at 500mA. • Marking : MMBTA63: 2U MMBTA64: 2V • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage VCBO VEBO IC Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous TJ TSTG Op. |
| Part Number | MMBTA64 |
| Manufacturer | WEITRON |
| Title | Darlington Transistor PNP Silicon |
| Description | Darlington Transistor PNP Silicon MMBTA64 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCES VCBO VEBO IC Value -30 -30 -10 -500 Unit Vdc Vdc Vdc mAdc THER. |
| Features | . |
| Part Number | MMBTA64 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA64 TRANSISTOR (PNP) SOT–23 FEATURES For Applications Requiring High Current Gain MARKING:2V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30. |
| Features |
For Applications Requiring High Current Gain MARKING:2V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -10 IC Collector Current -800 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 416 Tj Junction Temperature 150 Tstg Storage . |
| Part Number | MMBTA64 |
| Manufacturer | Fairchild |
| Title | PNP Transistor |
| Description | MPSA64 / MMBTA64 / PZTA64 Discrete POWER & Signal Technologies MPSA64 MMBTA64 C PZTA64 C E C B E C B TO-92 E SOT-23 Mark: 2V B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. . |
| Features | rwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA64 625 5.0 83.3 200 Max *MMBTA64 350 2.8 357 **PZTA64 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ©. |
| Part Number | MMBTA64 |
| Manufacturer | UTC |
| Title | DARLINGTON TRANSISTOR |
| Description | The UTC MMBTA63-64 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = -30V * Collector current up to -1.2A * Collector Dissipation: PC = 625 mW 3 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBTA63L-AE3-R MMBTA63G-AE. |
| Features | * Collector-Emitter Voltage: VCES = -30V * Collector current up to -1.2A * Collector Dissipation: PC = 625 mW 3 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBTA63L-AE3-R MMBTA63G-AE3-R SOT-23 MMBTA64L-AE3-R MMBTA64G-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC BEC Packing Tape Reel Tape. |
| Part Number | MMBTA64 |
| Manufacturer | GME |
| Title | PNP Darlington Amplifier Transistor |
| Description | Production specification PNP Darlington Amplifier Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA13/MMBTA14). High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS Ideal for medium power amplification and switching. ORDERING INFORMA. |
| Features |
Epitaxial planar die construction. Complementary NPN type available (MMBTA13/MMBTA14). High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA63 MMBTA64 2U 2V SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-b. |
| Part Number | MMBTA64 |
| Manufacturer | SEMTECH |
| Title | PNP Transistor |
| Description | MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction. |
| Features | at) -VBE(on) fT Min. 5000 10000 10000 20000 - - 30 - - 125 Max. - 100 100 - 1.5 2 - Unit - nA nA V V V MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTA63 / MMBTA64 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 . |
| Part Number | MMBTA64 |
| Manufacturer | Diodes Incorporated |
| Title | PNP TRANSISTOR |
| Description | Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Complementary NPN Type: MMBTA13 /MMBTA14 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standard. |
| Features |
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Complementary NPN Type: MMBTA13 /MMBTA14 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability MMBTA63 / MMBTA64 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Mechanical Data Case: SOT23 . |
| Part Number | MMBTA64 |
| Manufacturer | Motorola |
| Title | DARLINGTON TRANSISTOR |
| Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol V CES vCBO v EBO c THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature Tstq •Thermal Resi. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBTA63 |
SEMTECH |
PNP Transistor |
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| 2 | MMBTA63 |
GME |
PNP Darlington Amplifier Transistor |
|
| 3 | MMBTA63 |
UTC |
DARLINGTON TRANSISTOR |
|
| 4 | MMBTA63 |
Diodes Incorporated |
PNP TRANSISTOR |
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| 5 | MMBTA63 |
Fairchild |
PNP Transistor |
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| 6 | MMBTA63 |
MCC |
PNP Darlington Transistor |
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| 7 | MMBTA63 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 8 | MMBTA63 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 9 | MMBTA63LT1 |
Motorola |
Transistors |
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| 10 | MMBTA63LT1 |
ON |
PNP Transistors |
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Desde 2024. D4U Semiconductor.
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