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| Part Number | MMBTA63 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBTA63 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage MMBTA63/64 VCBO MMBTA63/64 VCES -30 -30 Emitter-Base Voltage Collector Current DC Pulse VEBO IC ICP -10 -50. |
| Features | =-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Current Gain Bandwith Product MMBTA63/64 fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, f=100MH. |
| Part Number | MMBTA63 |
| Manufacturer | UTC |
| Title | DARLINGTON TRANSISTOR |
| Description | The UTC MMBTA63-64 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = -30V * Collector current up to -1.2A * Collector Dissipation: PC = 625 mW 3 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBTA63L-AE3-R MMBTA63G-AE. |
| Features | * Collector-Emitter Voltage: VCES = -30V * Collector current up to -1.2A * Collector Dissipation: PC = 625 mW 3 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBTA63L-AE3-R MMBTA63G-AE3-R SOT-23 MMBTA64L-AE3-R MMBTA64G-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC BEC Packing Tape Reel Tape. |
| Part Number | MMBTA63 |
| Manufacturer | Diodes Incorporated |
| Title | PNP TRANSISTOR |
| Description | Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Complementary NPN Type: MMBTA13 /MMBTA14 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standard. |
| Features |
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Complementary NPN Type: MMBTA13 /MMBTA14 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability MMBTA63 / MMBTA64 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Mechanical Data Case: SOT23 . |
| Part Number | MMBTA63 |
| Manufacturer | Motorola |
| Title | DARLINGTON TRANSISTOR |
| Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol V CES vCBO v EBO c THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature Tstq •Thermal Resi. |
| Features | . |
| Part Number | MMBTA63 |
| Manufacturer | GME |
| Title | PNP Darlington Amplifier Transistor |
| Description | Production specification PNP Darlington Amplifier Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA13/MMBTA14). High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS Ideal for medium power amplification and switching. ORDERING INFORMA. |
| Features |
Epitaxial planar die construction. Complementary NPN type available (MMBTA13/MMBTA14). High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA63 MMBTA64 2U 2V SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-b. |
| Part Number | MMBTA63 |
| Manufacturer | Fairchild |
| Title | PNP Transistor |
| Description | MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies MPSA63 MMBTA63 C PZTA63 C E C B E C B TO-92 E SOT-23 Mark: 2U B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. S. |
| Features | RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA63 625 5.0 83.3 200 Max *MMBTA63 350 2.8 357 **PZTA63 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for t. |
| Part Number | MMBTA63 |
| Manufacturer | MCC |
| Title | PNP Darlington Transistor |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBTA63 MMBTA64 Features • This device is designed for applications requiring extremely high current gain at 500mA. • Marking : MMBTA63: 2U MMBTA6. |
| Features |
• This device is designed for applications requiring extremely high current gain at 500mA. • Marking : MMBTA63: 2U MMBTA64: 2V • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage VCBO VEBO IC Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous TJ TSTG Op. |
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|---|---|---|---|---|
| 1 | MMBTA63LT1 |
Motorola |
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| 2 | MMBTA63LT1 |
ON |
PNP Transistors |
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| 3 | MMBTA63LT1G |
ON Semiconductor |
Darlington Transistors |
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| 4 | MMBTA64 |
GME |
PNP Darlington Amplifier Transistor |
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| 5 | MMBTA64 |
SEMTECH |
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| 6 | MMBTA64 |
UTC |
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| 7 | MMBTA64 |
Fairchild |
PNP Transistor |
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| 8 | MMBTA64 |
Diodes Incorporated |
PNP TRANSISTOR |
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| 9 | MMBTA64 |
MCC |
PNP Darlington Transistor |
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| 10 | MMBTA64 |
WEITRON |
Darlington Transistor PNP Silicon |
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Desde 2024. D4U Semiconductor.
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