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| Part Number | MMBTA13 |
| Distributor | Stock | Price | Buy |
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| Part Number | MMBTA13 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features 。 High current gain. / Applications 。 Applications requiring extremely high current gain device designed. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / Marking hFE Range . |
| Features | 。 High current gain. / Applications 。 Applications requiring extremely high current gain device designed. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / Marking hFE Range Marking >10000 H1M http://www.fsbrec.com 1/6 MMBTA13 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitt. |
| Part Number | MMBTA13 |
| Manufacturer | Micro Commercial Components |
| Title | NPN Darlington Amplifier Transistor |
| Description | MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBTA13 MMBTA14 • • • • Operating And Storage Temperatures –55OC to 150OC RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) Capable of 225mWatts of Power Dissipat. |
| Features |
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MMBTA13 MMBTA14
• • • • Operating And Storage Temperatures –55OC to 150OC RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) Capable of 225mWatts of Power Dissipation Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N NPN Darlington Amplifier Transistor SOT-23 A D Electrical Ch. |
| Part Number | MMBTA13 |
| Manufacturer | Fairchild |
| Title | NPN Darlington Transistor |
| Description | MMBTA13 NPN Darlington Transistor January 2005 MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 SOT-23 1 Mark: 1M 1. Base 2. Emitter 3.. |
| Features | . |
| Part Number | MMBTA13 |
| Manufacturer | Motorola |
| Title | DARLINGTON AMPLIFIER TRANSISTOR |
| Description | MAXIMUM RATINGS Rating Collector-Emitter VoKage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCES VCBO VEBO ic THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T/ = 25°C Derate above 25°C PD Storage Temperature Tstg •Thermal Resist. |
| Features | . |
| Part Number | MMBTA13 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collertor Current VCBO VCES VEBO IC 30 30 10 500 Collector Power Dissipation PC * 350 J. |
| Features | itter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Current Gain Bandwith Product fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V IC=100mA, VCE=5V IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V MIN. 30 - 5,000 10,000 10,000 20,000 125 TYP. - MAX. - 100 100 1.5 2.0 - UNIT V nA nA - V V MHz MARK SPEC TYPE M. |
| Part Number | MMBTA13 |
| Manufacturer | UTC |
| Title | DARLINGTON TRANSISTOR |
| Description | The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBTA13G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin . |
| Features | * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBTA13G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 123 EBC Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-006.d MMBTA13 Preli. |
| Part Number | MMBTA13 |
| Manufacturer | Galaxy Semi-Conductor |
| Title | NPN General Purpose Transistor |
| Description | BL Galaxy Electrical Production specification NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBTA63/MMBTA64). z High current gain. Pb Lead-free MMBTA13/MMBTA14 APPLICATIONS z Ideal for medium power amplification and switching . |
| Features | z Epitaxial planar die construction. z Complementary PNP type available (MMBTA63/MMBTA64). z High current gain. Pb Lead-free MMBTA13/MMBTA14 APPLICATIONS z Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Marking MMBTA13 MMBTA14 K2D K3D SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO Parameter co. |
| Part Number | MMBTA13 |
| Manufacturer | Samsung |
| Title | NPN DARLINGTON AMPLIFIER TRANSISTOR |
| Description | . |
| Features | . |
| Part Number | MMBTA13 |
| Manufacturer | Diodes Incorporated |
| Title | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| Description | MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63 /MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (No. |
| Features |
• Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63 /MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Ratin. |
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