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| Part Number | MMBT5088 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBT5088 |
| Manufacturer | Samsung |
| Title | NPN (LOW NOISE TRANSISTOR) |
| Description | . |
| Features | . |
| Part Number | MMBT5088 |
| Manufacturer | Fairchild |
| Title | NPN General Purpose Amplifier |
| Description | 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from . |
| Features | operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 2.8 357 Units PD RθJC RθJA Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semic. |
| Part Number | MMBT5088 |
| Manufacturer | UTC |
| Title | (MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER |
| Description | The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBT5088G-AE3-R MMBT5089G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-23 . |
| Features | Derating Factor above TA= 25°C PD 350 mW 2.8 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are . |
| Part Number | MMBT5088 |
| Manufacturer | Kexin |
| Title | NPN General Purpose Amplifier |
| Description | SMD Type TransistIoCrs NPN General Purpose Amplifier MMBT5088,MMBT5089 Features NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.col. |
| Features | NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Tota. |
| Part Number | MMBT5088 |
| Manufacturer | WEITRON |
| Title | Low Noise NPN Transistor |
| Description | Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B oard (1) TA=25 C Derate above 2 5 C Ther. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT5086 |
Samsung |
PNP (LOW NOISE TRANSISTOR) |
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| 2 | MMBT5086 |
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| 3 | MMBT5087 |
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|
| 4 | MMBT5087 |
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| 5 | MMBT5087 |
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| 6 | MMBT5087 |
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|
| 7 | MMBT5087 |
TAITRON |
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|
| 8 | MMBT5087 |
CHINA BASE |
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|
| 9 | MMBT5087 |
Kexin |
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|
| 10 | MMBT5087L |
ON Semiconductor |
Low Noise Transistor |
|
Desde 2024. D4U Semiconductor.
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