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| Part Number | MMBT5087 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBT5087 |
| Manufacturer | Samsung |
| Title | PNP (LOW NOISE TRANSISTOR) |
| Description | . |
| Features | . |
| Part Number | MMBT5087 |
| Manufacturer | TAITRON |
| Title | SMD General Purpose Low Noise Transistor |
| Description | MMBT5087 Marking Code 2Q VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 3 IC Collector Current 50 Ptot* Power Dissipation above 25°C 225 RθJA Thermal Resistance from Junction to Ambient 417 TJ Junction Temperature 150 TSTG Storage T. |
| Features |
• PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5087 Marking Code 2Q VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage. |
| Part Number | MMBT5087 |
| Manufacturer | SEMTECH |
| Title | PNP Silicon Epitaxial Planar Transistor |
| Description | MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature . |
| Features | mA -ICM 200 mA Ptot 200 mW Tj 150 OC TS - 55 to + 150 OC Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) fT Ccb Min. 250 250 250 50 50 3 40 - Max. 800 50 50 - 0.3 0.85 4 Unit nA nA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® . |
| Part Number | MMBT5087 |
| Manufacturer | CHINA BASE |
| Title | PNP Silicon Epitaxial Planar Transistor |
| Description | MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature . |
| Features | V -VCEO 50 V -VEBO 3 V -IC 100 mA -ICM 200 mA Ptot 200 mW Tj 150 OC TS - 55 to + 150 OC Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) fT Ccb Min. 250 250 250 50 50 3 40 - Max. 800 50 50 - 0.3 0.85 4 Unit nA nA V V V V V MHz pF 6/3/2011 Page 2 of 3 6/3/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 Page 3 of 3 . |
| Part Number | MMBT5087 |
| Manufacturer | Fairchild |
| Title | PNP General Purpose Amplifier |
| Description | 2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1. Base 2. Emitter 3. Collect. |
| Features | Condition IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 VCB = -10V, IE = 0 VCB = -35V, IE = 0 VEB = -3.0V, IC = 0 IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = -10mA, IB = -1.0mA IC =. |
| Part Number | MMBT5087 |
| Manufacturer | ON Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | 2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 1 TO-92 1. Emitter 2. Base 3. Collector 3 2 1 SOT-23 Mark: 2Q 1. Base 2. Emitter 3. |
| Features | ted Symbol Parameter Test Condition Min. Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 ICEO Collector Cutoff Current VCB = -10V, IE = 0 VCB = -35V, IE = 0 ICBO Emitter Cutoff Current VEB = -3.0V, IC = 0 On Characteristics hFE DC Current Gain IC = -100µA, VCE = -5.0V IC. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT5086 |
Samsung |
PNP (LOW NOISE TRANSISTOR) |
|
| 2 | MMBT5086 |
Fairchild |
PNP General Purpose Amplifier |
|
| 3 | MMBT5087L |
ON Semiconductor |
Low Noise Transistor |
|
| 4 | MMBT5087LT1 |
Motorola |
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|
| 5 | MMBT5088 |
Samsung |
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|
| 6 | MMBT5088 |
Fairchild |
NPN General Purpose Amplifier |
|
| 7 | MMBT5088 |
UTC |
(MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER |
|
| 8 | MMBT5088 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 9 | MMBT5088 |
WEITRON |
Low Noise NPN Transistor |
|
| 10 | MMBT5088 |
Kexin |
NPN General Purpose Amplifier |
|
Desde 2024. D4U Semiconductor.
|