Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | MMBT3906LT1 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBT3906LT1 |
| Manufacturer | Tuofeng Semiconductor |
| Title | PNP Transistor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Sy. |
| Features |
·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ, Tstg Junction and Storage Temperature Value -40 -40 -5 -0. |
| Part Number | MMBT3906LT1 |
| Manufacturer | WEJ |
| Title | TRANSISTOR |
| Description | RoHS MMBT3906LT1 SOT-23 TRANSISTOR Dimensions(Unit:mm) SOT-23 GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1. DCollector Dissipation:Pc=225mW Collector-Emitter Voltage:VCEO=-40V .,LTPNP Epitaxial Silicon Transistor 1.9 2.9 0.2 0.97Ref. 0.124 0.10 0.4 0.5Ref. 2.3 0.2 1.3 0.2 2 . |
| Features | r Saturation Voltage ECollector-Emitter Saturation Voltage WBase-Emitter Saturation Voltage (Ta=25 oC) Symbol MIN. TYP. MAX. Unit Condition BVCEO BVCBO BVEBO ICEO IEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat) -40 -40 -5 60 80 100 60 30 -50 -50 300 -0.4 -0.25 -0.95 V IC=-1mA IB=0 V IC=-10 A IE=0 V IE=-10 A IC=0 nA VCB=-30V, VEB=-3V nA VCB=-3V, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-. |
| Part Number | MMBT3906LT1 |
| Manufacturer | Motorola |
| Title | General Purpose Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Cont. |
| Features |
llector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) 1. FR – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT3906LT1G |
ON Semiconductor |
PNP Transistor |
|
| 2 | MMBT3906LT3G |
ON Semiconductor |
PNP Transistor |
|
| 3 | MMBT3906L |
Taiwan Semiconductor |
PNP Small Signal Transistor |
|
| 4 | MMBT3906L |
ON |
PNP Transistor |
|
| 5 | MMBT3906LP |
Diodes |
40V PNP SMALL SIGNAL TRANSISTOR |
|
| 6 | MMBT3906 |
Diodes |
40V PNP SMALL SIGNAL TRANSISTOR |
|
| 7 | MMBT3906 |
CITC |
PNP Transistor |
|
| 8 | MMBT3906 |
GOOD-ARK |
PNP Transistor |
|
| 9 | MMBT3906 |
ON Semiconductor |
PNP General-Purpose Amplifier |
|
| 10 | MMBT3906 |
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|