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MMBT3906LT1 |
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| Part Number | MMBT3906LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 Motorola Preferred Device MAXIMUM RATINGS Rating ... |
| Features |
llector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) 1. FR – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBL — ... |
| Document |
 MMBT3906LT1 Data Sheet
PDF 221.88KB |
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