Part Number | MMBT2222 |
Distributor | Stock | Price | Buy |
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Part Number | MMBT2222 |
Manufacturer | Diotec |
Title | Surface mount Si-Epitaxial PlanarTransistors |
Description | . |
Features | . |
Part Number | MMBT2222 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon NPN transistor |
Description | SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mA。 Collector currents up to 600mA. / Applications 。 General purpose amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN 1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Ran. |
Features | 600mA。 Collector currents up to 600mA. / Applications 。 General purpose amplifier. / Equivalent Circuit / Pinning 3 2 1 PIN 1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Range Marking 100~300 1BH http://www.fsbrec.com 1/6 MMBT2222 Rev.E Nov.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage . |
Part Number | MMBT2222 |
Manufacturer | ART CHIP |
Title | NPN GENERAL PURPOSE AMPLIFIER |
Description | NPN GENERAL PURPOSE AMPLIFIER FEATURES *Epitaxial planar die construction *Complementary PNP Type available(MMBT2907) ORDERING INFORMATION Device Package Shipping† MMBT2222 SOT −23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and. |
Features | *Epitaxial planar die construction *Complementary PNP Type available(MMBT2907) ORDERING INFORMATION Device Package Shipping† MMBT2222 SOT −23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING 1P 1 1P = Specific Device Code (Note. |
Part Number | MMBT2222 |
Manufacturer | Weitron Technology |
Title | NPN Transistors |
Description | MMBT2222 MMBT2222A 3 1 SOT-23 VCEO 2 u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10. |
Features | 0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) Voltage Feeback Radio (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) S mall-S ignal C urrent G ain (I C =1.0 mAdc, V C E =10V dc, f=1.0 kHz) (I C =10 mAdc, V C E =10V dc, f=1.0 kHz) Output Admittance (IC=1.0 mAdc, VCE=10Vdc, f=-1.0kHz) (IC=10 mAdc, VCE=10Vdc, . |
Part Number | MMBT2222 |
Manufacturer | Galaxy Semi-Conductor |
Title | NPN General Purpose Amplifier |
Description | BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free Production specification MMBT2222 APPLICATIONS z Use as a medium power amplifier. z Switching requiring collector currents up to 500mA. ORDERING IN. |
Features | z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free Production specification MMBT2222 APPLICATIONS z Use as a medium power amplifier. z Switching requiring collector currents up to 500mA. ORDERING INFORMATION Type No. Marking MMBT2222 M1B SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO V. |
Part Number | MMBT2222 |
Manufacturer | SEMTECH |
Title | NPN Transistor |
Description | MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation . |
Features | age at IE = 10 µA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, I. |
Part Number | MMBT2222 |
Manufacturer | MIC |
Title | NPN EPITAXIAL SILICON TRANSISTOR |
Description | NPN EPITAXIAL SILICON TRANSISTOR MMBT2222/ALT1 GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc(max)=225mW Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating 2222 2222A Collector-Base Voltage Vcbo 60 75 Collector-Emitter Voltag. |
Features | . |
Part Number | MMBT2222 |
Manufacturer | TIPTEK |
Title | GENERAL PURPOSE NPN TRANSISTORS |
Description | MMBT2222/MMBT2222A GENERAL PURPOSE NPN TRANSISTORS FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE(MMBT2907A) PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE MECHANICAL DATA CASE:SOT-23 TERMINALS:SOLDERABLE PER MIL-STD-202, METHOD 208 APPR. |
Features |
HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE(MMBT2907A) PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE MECHANICAL DATA CASE:SOT-23 TERMINALS:SOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT:0.008 GRAM Pb Free: MMBT2222/MMBT2222A Halogen Free: MMBT2222-H/MMBT2222A-H CASE:SOT-23 DIMENSIONS IN MILLIMETERS AND (INCHES) MAXIMUM RATINGS R. |
Part Number | MMBT2222 |
Manufacturer | Samsung |
Title | NPN TRANSISTOR |
Description | . |
Features | . |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MMBT2222 |
HOTTECH |
SWITCHING TRANSISTOR | |
2 | MMBT2222 |
JinYu |
NPN Transistor | |
3 | MMBT2222 |
GME |
NPN General Purpose Amplifier | |
4 | MMBT2222A |
GME |
NPN Amplifier | |
5 | MMBT2222A |
MCC |
NPN Amplifier | |
6 | MMBT2222A |
CITC |
NPN Transistor | |
7 | MMBT2222A |
MIC |
NPN EPITAXIAL SILICON TRANSISTOR | |
8 | MMBT2222A |
Cystech Electonics |
NPN Transistor | |
9 | MMBT2222A |
TIPTEK |
GENERAL PURPOSE NPN TRANSISTORS | |
10 | MMBT2222A |
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR |