MJE521 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MJE521 4 AMPERE POWER TRANSISTOR


MJE521
Part Number MJE521
Distributor Stock Price Buy
Central Semiconductor
MJE521
Part Number MJE521
Manufacturer Central Semiconductor
Title POWER TRANSISTOR
Description 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
Features .
ST Microelectronics
MJE521
Part Number MJE521
Manufacturer ST Microelectronics
Title SILICON NPN TRANSISTOR
Description The MJE521 is a silicon Epitaxial-Base NPN )transistor in Jedec SOT-32 plastic package. t(sIt is intended for use in 5 to 20W audio amplifiers, Producgeneral purpose amplifier and switching circuits. 1 2 3 SOT-32 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Sy.
Features .
Inchange Semiconductor
MJE521
Part Number MJE521
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 1A ·Complement to Type MJE371 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general−purpose amplifier and switching circuits .
Features ICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1 A ; VCE= 1V MJE521 MIN MAX UNIT 40 V 0.1 mA 0.1 mA 40 NOTICE: ISC reserves the rights to make changes of the conten.
ON Semiconductor
MJE521
Part Number MJE521
Manufacturer ON Semiconductor
Title Plastic Medium-Power NPN Silicon Transistor
Description MJE521 Plastic Medium−Power NPN Silicon Transistor These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Co.
Features
• DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc
• Complementary to PNP MJE371
• Pb−Free Package is Available* http://onsemi.com 4 AMPERES POWER TRANSISTORS NPN SILICON 40 VOLTS, 40 WATTS MAXIMUM RATINGS Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous ÎÎÎÎ.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MJE520
Central Corp
SILICON COMPLEMENTARY POWER TRANSISTORS Datasheet
2 MJE520
INCHANGE
NPN Transistor Datasheet
3 MJE520
SGS-THOMSON
COMPLEMENTARY MEDIUM POWER TRANSISTOR Datasheet
4 MJE521G
ON Semiconductor
Plastic Medium-Power NPN Silicon Transistor Datasheet
5 MJE52T
INCHANGE
NPN Transistor Datasheet
6 MJE5170
INCHANGE
PNP Transistor Datasheet
7 MJE5171
INCHANGE
PNP Transistor Datasheet
8 MJE5172
INCHANGE
PNP Transistor Datasheet
9 MJE5180
INCHANGE
NPN Transistor Datasheet
10 MJE5181
INCHANGE
NPN Transistor Datasheet
More datasheet from Motorola
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad