Part Number | MJE520 |
Distributor | Stock | Price | Buy |
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Part Number | MJE520 |
Manufacturer | SGS-THOMSON |
Title | COMPLEMENTARY MEDIUM POWER TRANSISTOR |
Description | The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene ral purpose amplifier and switching circuits. INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol P aram eter Vcbo Collector-base Voltage (Ie. |
Features |
r Cutoff Current (Ie =0)
VCB = 30V
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Part Number | MJE520 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Collector Current-IC= 3.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIM. |
Features | EBO Emitter-Base Breakdown Vltage VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance CONDITIONS IC= 100μA ; IE= 0 IC= 100mA IE= 100μA ; IC= 0 IC= 500mA; IB= 50mA VCB= 50V; IE= 0 VEB= 4V; IC= 0 IC= 1 A ; VCE= 1 V IC= 50mA ; VCE= 10V IE= 0; VCB= 10V,ftest= 1. |
similar datasheet
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---|---|---|---|---|
1 | MJE521 |
Motorola |
4 AMPERE POWER TRANSISTOR | |
2 | MJE521 |
ST Microelectronics |
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5 | MJE521 |
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7 | MJE52T |
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8 | MJE5170 |
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10 | MJE5172 |
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