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| Part Number | MJE172 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJE172 |
| Manufacturer | Central Semiconductor |
| Title | POWER TRANSISTOR |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . |
| Features | . |
| Part Number | MJE172 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80 V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE182 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current hig. |
| Features | Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJE172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Sa. |
| Part Number | MJE172 |
| Manufacturer | Multicomp |
| Title | Low Power Transistor |
| Description | Plastic, PNP, Silicon Power Transistorin A TO-126 PK Designed for low power audio amplifier and low current, high speed switching. Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Total Device Dissipation at Tc = . |
| Features | . |
| Part Number | MJE172 |
| Manufacturer | Fairchild |
| Title | PNP Epitaxial Silicon Transistor |
| Description | MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJE170 : MJE171 : MJE172 : MJ. |
| Features | -0.1 50 30 12 250 Max. Units V V V µA µA µA mA mA mA µA ICBO VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, @TC = 150°C VCB = - 80V, IE = 0, @TC = 150°C VCB = - 100V, IE = 0, @TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA IC = - . |
| Part Number | MJE172 |
| Manufacturer | Motorola |
| Title | 3 AMPERE POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE171/D Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(. |
| Features | ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ. |
| Part Number | MJE172 |
| Manufacturer | CDIL |
| Title | PNP PLASTIC POWER TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low C. |
| Features | . |
| Part Number | MJE172 |
| Manufacturer | ST Microelectronics |
| Title | Low voltage high speed switching NPN transistor |
| Description | teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 plastic package. It is sdesigned for low power audio amplifiers and low Obsolete Product(s) - Obcurrent, high speed switching applications. SOT-32 Figure 1. Internal schematic. |
| Features |
■ High speed switching ■ NPN device t(s)Applications c ■ Audio amplifier u ■ High speed switching applications ProdDescription teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 plastic package. It is sdesigned for low power audio amplifiers and low Obsolete Product(s) - Obcurrent, high speed switching applications. SOT-32 . |
| Part Number | MJE172 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Plastic Silicon Power Transistors |
| Description | www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features http://onsemi.com • Collecto. |
| Features |
http://onsemi.com
• Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD . |
| Part Number | MJE172 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | The MJE172 is a silicon PNP transistor in a TO−126 type package designed for low power audio amplifier and low−current, high−speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Cu. |
| Features | D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Current−Gain—Bandwidth Product: fT = 50MHz (Min) @ IC = 100mA D Annular Construction for Low Leakage: ICBO = 100nA (Max) @ VCB = 100V Absolute Maximum Ratings: Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
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| 4 | MJE170 |
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| 7 | MJE170G |
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| 8 | MJE171 |
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| 9 | MJE171 |
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| 10 | MJE171 |
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Desde 2024. D4U Semiconductor.
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