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MJE170 POWER TRANSISTOR


MJE170
Part Number MJE170
Distributor Stock Price Buy
ON Semiconductor
MJE170
Part Number MJE170
Manufacturer ON Semiconductor
Title (MJE170 - MJE182) Complementary Plastic Silicon Power Transistors
Description www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features http://onsemi.com • Collecto.
Features http://onsemi.com
• Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD .
SeCoS
MJE170
Part Number MJE170
Manufacturer SeCoS
Title PNP Transistor
Description Elektronische Bauelemente MJE170 / MJE171 / MJE172 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-126 FEATURES  Low frequency amplifier  Low current  High speed switching applications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherw.
Features
 Low frequency amplifier
 Low current
 High speed switching applications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings MJE170 -60 Collector - Base Voltage MJE171 MJE172 VCBO -80 -100 MJE170 -40 Collector - Emitter Voltage MJE171 MJE172 VCEO -60 -80 Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junctio.
CDIL
MJE170
Part Number MJE170
Manufacturer CDIL
Title PNP PLASTIC POWER TRANSISTORS
Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low C.
Features .
Inchange Semiconductor
MJE170
Part Number MJE170
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistors
Description ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier applications. ·Lo.
Features /W MJE170 isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-1.5.
Fairchild
MJE170
Part Number MJE170
Manufacturer Fairchild
Title PNP Epitaxial Silicon Transistor
Description MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJE170 : MJE171 : MJE172 : MJ.
Features -0.1 50 30 12 250 Max. Units V V V µA µA µA mA mA mA µA ICBO VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, @TC = 150°C VCB = - 80V, IE = 0, @TC = 150°C VCB = - 100V, IE = 0, @TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA IC = - .

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