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| Part Number | MJE15031 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJE15031 |
| Manufacturer | ON |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Com. |
| Features |
• High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCEO 120 150 Vdc Collector−Base Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCB Vdc 120 150 Emitter−Base Voltage Collector Current − Continuous Collector Cu. |
| Part Number | MJE15031 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors |
| Description | The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO−220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustain. |
| Features | D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Ba. |
| Part Number | MJE15031 |
| Manufacturer | Central Semiconductor |
| Title | PNP Transistor |
| Description | The CENTRAL SEMICONDUCTOR MJE15028/MJE15029 Series types are Complementary Silicon Power Transistors designed for use in audio amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage Collector-Emitter Voltage . |
| Features | . |
| Part Number | MJE15031 |
| Manufacturer | CDIL |
| Title | PNP PLASTIC POWER TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package MJE15028, MJE15030 MJE15029, MJE15031 MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers N LH BF . |
| Features | . |
| Part Number | MJE15031 |
| Manufacturer | Savantic |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-220C package ·Complement to type MJE150230 ·High transition frequency ·DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Emitter Collector;con. |
| Features | ient MAX 2.5 62.5 UNIT /W /W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC curre. |
| Part Number | MJE15031 |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
| Part Number | MJE15031 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ，－，-， MJE15030 。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15030. / Applications 。 Designed for us as high-frequency drivers in audio amplifiers. / Equivalent Circuit / Pinning 123 P. |
| Features | ，－，-， MJE15030 。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15030. / Applications 。 Designed for us as high-frequency drivers in audio amplifiers. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE15031 Rev.F Mar.-2016 DATA SHEET / Absolute M. |
| Part Number | MJE15031 |
| Manufacturer | Multicomp |
| Title | Complementary Power Transistors |
| Description | MJE15030, 15031 Complementary Power Transistors Designed for use in high-frequency drivers in audio amplifier applications. Features: • Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. • DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. • T. |
| Features |
• Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. • DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. • TO-220AB compact package. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.. |
| Part Number | MJE15031 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) ·High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= 0.5A ·DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJE15030 ·Minimum Lot-to-Lot variations for robust device performance and reli. |
| Features | /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE15031 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A V. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE15030 |
RECTRON |
Power Transistors |
|
| 2 | MJE15030 |
Central Semiconductor |
NPN Transistor |
|
| 3 | MJE15030 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | MJE15030 |
INCHANGE |
NPN Transistor |
|
| 5 | MJE15030 |
Motorola |
8 AMPERE POWER TRANSISTORS |
|
| 6 | MJE15030 |
ON |
Complementary Silicon Plastic Power Transistors |
|
| 7 | MJE15030 |
CDIL |
NPN PLASTIC POWER TRANSISTORS |
|
| 8 | MJE15030 |
Savantic |
Silicon NPN Power Transistors |
|
| 9 | MJE15030 |
NTE |
Silicon Complementary Transistors |
|
| 10 | MJE15030 |
Multicomp |
Complementary Power Transistors |
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