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| Part Number | MJE15030 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJE15030 |
| Manufacturer | Multicomp |
| Title | Complementary Power Transistors |
| Description | MJE15030, 15031 Complementary Power Transistors Designed for use in high-frequency drivers in audio amplifier applications. Features: • Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. • DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. • T. |
| Features |
• Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. • DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. • TO-220AB compact package. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.. |
| Part Number | MJE15030 |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
| Part Number | MJE15030 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features ，－，-， MJE15031 。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15031. / Applications 。 Designed for us as high-frequency drivers in audio amplifiers. / Equivalent Circuit / Pinning 123 P. |
| Features | ，－，-， MJE15031 。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15031. / Applications 。 Designed for us as high-frequency drivers in audio amplifiers. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE15030 Rev.F Mar.-2016 DATA SHEET / Absolute M. |
| Part Number | MJE15030 |
| Manufacturer | Motorola |
| Title | 8 AMPERE POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE15028/D Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc • Co. |
| Features | ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ Rating. |
| Part Number | MJE15030 |
| Manufacturer | ON |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Com. |
| Features |
• High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCEO 120 150 Vdc Collector−Base Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G VCB Vdc 120 150 Emitter−Base Voltage Collector Current − Continuous Collector Cu. |
| Part Number | MJE15030 |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package MJE15028, MJE15030 MJE15029, MJE15031 MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers N LH BF . |
| Features | . |
| Part Number | MJE15030 |
| Manufacturer | Savantic |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-220C package ·Complement to type MJE15031 ·High transition frequency ·DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Base Collector;connected. |
| Features | 2.5 62.5 UNIT /W /W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain D. |
| Part Number | MJE15030 |
| Manufacturer | NTE |
| Title | Silicon Complementary Transistors |
| Description | The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO−220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustain. |
| Features | D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Ba. |
| Part Number | MJE15030 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) ·High Current Gain-Bandwidth Product- : fT= 30MHz(Min)@ IC= 0.5A ·DC current gain - : hFE = 40 (Min) @IC= 3.0 A : hFE = 20 (Min) @IC= 4.0 A ·Complement to Type MJE15031 ·Minimum Lot-to-Lot variations for robust device performance and reli. |
| Features | tance,Junction to Ambient 62.5 ℃/W MJE15030 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJE15030 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A VBE(on) Base-Emitt. |
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| 1 | MJE15031 |
NTE |
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| 2 | MJE15031 |
RECTRON |
Power Transistors |
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| 3 | MJE15031 |
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PNP Transistor |
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| 4 | MJE15031 |
INCHANGE |
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| 5 | MJE15031 |
Motorola |
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| 6 | MJE15031 |
ON |
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| 7 | MJE15031 |
BLUE ROCKET ELECTRONICS |
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| 8 | MJE15031 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
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| 9 | MJE15031 |
Savantic |
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| 10 | MJE15031 |
Multicomp |
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Desde 2024. D4U Semiconductor.
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