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| Part Number | MJD243 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJD243 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features VCEO，。 Low Collector−Emitter Saturation Voltage, High Current−Gain. / Applications ，。 Low power audio amplifier, Low current, high speed switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Ba. |
| Features | VCEO，。 Low Collector−Emitter Saturation Voltage, High Current−Gain. / Applications ，。 Low power audio amplifier, Low current, high speed switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJD243 Rev.E May.-2016 DATA SHEET / Absolute Maximum. |
| Part Number | MJD243 |
| Manufacturer | Motorola |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD243/D Plastic Power Transistor MJD243* *Motorola Preferred Device DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(. |
| Features | .118 3.0 1.5 15 0.063 1.6 0.243 6.172 inches mm TA (SURFACE MOUNT) 1 10 TC 0.5 0 5 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 0.07 1.8 0.165 4.191 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î. |
| Part Number | MJD243 |
| Manufacturer | ON |
| Title | Complementary Silicon Plastic Power Transistor |
| Description | MJD243 (NPN), MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features http://onsemi.com 4.0 A, 100 V, 12.5 W POWER TRANSISTOR 4 4 Base 1 Collector 2 Emit. |
| Features |
http://onsemi.com
4.0 A, 100 V, 12.5 W POWER TRANSISTOR
4 4 Base 1 Collector 2 Emitter 3 DPAK−3 CASE 369D STYLE 1 1 2 3 DPAK−3 CASE 369C STYLE 1
• Collector−Emitter Sustaining Voltage − • VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead V. |
similar datasheet
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| 1 | MJD20 |
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| 2 | MJD200 |
INCHANGE |
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| 3 | MJD200 |
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| 4 | MJD200 |
Fairchild |
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| 5 | MJD200 |
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| 6 | MJD210 |
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| 7 | MJD210 |
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| 8 | MJD210 |
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| 9 | MJD210 |
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| 10 | MJD210 |
UTC |
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Desde 2024. D4U Semiconductor.
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