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MJD243 |
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| Part Number | MJD243 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD253 ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJD243
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.2A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A; VCE= 1V
VCB= 100V; IE= 0 VCB=... |
| Document |
 MJD243 Data Sheet
PDF 242.07KB |
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Desde 2024. D4U Semiconductor.
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