Part Number | MBR30045CTR |
Distributor | Stock | Price | Buy |
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Part Number | MBR30045CTR |
Manufacturer | Naina Semiconductor |
Title | (MBR30045CT - MBR300100CTR) Schottky Power Diode |
Description | Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak rev. |
Features |
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbo. |
Part Number | MBR30045CTR |
Manufacturer | GeneSiC |
Title | Silicon Power Schottky Diode |
Description | Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Paramet. |
Features |
• High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage. |
similar datasheet
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1 | MBR30045CT |
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2 | MBR30045CT |
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