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MBR30045CTR Silicon Power Schottky Diode


MBR30045CTR
Part Number MBR30045CTR
Distributor Stock Price Buy
Naina Semiconductor
MBR30045CTR
Part Number MBR30045CTR
Manufacturer Naina Semiconductor
Title (MBR30045CT - MBR300100CTR) Schottky Power Diode
Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak rev.
Features



• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbo.
GeneSiC
MBR30045CTR
Part Number MBR30045CTR
Manufacturer GeneSiC
Title Silicon Power Schottky Diode
Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Paramet.
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage.

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