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MBR30045CT 300 Amp Rectifier 20 to 100 Volts Schottky Barrier


MBR30045CT
Part Number MBR30045CT
Distributor Stock Price Buy
America Semiconductor
MBR30045CT
Part Number MBR30045CT
Manufacturer America Semiconductor
Title Silicon Power Schottky Diode
Description Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
Features .
Naina Semiconductor
MBR30045CT
Part Number MBR30045CT
Manufacturer Naina Semiconductor
Title (MBR30045CT - MBR300100CTR) Schottky Power Diode
Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak rev.
Features



• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbo.
GeneSiC
MBR30045CT
Part Number MBR30045CT
Manufacturer GeneSiC
Title Silicon Power Schottky Diode
Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Paramet.
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage.

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