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| Part Number | KSB1366 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | KSB1366 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KSD2012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio. |
| Features | OL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V hFE-2 DC Current Gain IC= -3A ; VCE= -5V . |
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Desde 2024. D4U Semiconductor.
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