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| Part Number | IXTH11N80 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IXTH11N80 |
| Manufacturer | IXYS |
| Title | MegaMOS FET |
| Description | MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C. |
| Features | q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 3 mA GS D VDS = VGS, ID = 250 µA VGS =. |
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| 2 | IXTH110N10L2 |
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| 7 | IXTH102N20T |
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| 8 | IXTH10N100 |
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| 9 | IXTH10P50 |
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| 10 | IXTH12N100 |
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Desde 2024. D4U Semiconductor.
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