Busque con el número de pieza junto con el fabricante o la descripción
IXTH11N80 |
Click to view a larger image
| Part Number | IXTH11N80 |
| Manufacturer | INCHANGE |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ... |
| Features |
·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage ... |
| Document |
 IXTH11N80 Data Sheet
PDF 323.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH11N80 |
IXYS |
MegaMOS FET |
|
| 2 | IXTH110N10L2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTH110N10L2 |
IXYS |
Power MOSFET |
|
| 4 | IXTH11P50 |
IXYS Corporation |
P-Channel MOSFET |
|
| 5 | IXTH102N15T |
IXYS |
Power MOSFET |
|
| 6 | IXTH102N15T |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|