IS45VM16160M |
Part Number | IS45VM16160M |
Manufacturer | ISSI |
Description | These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achie. |
Features |
▪ JEDEC standard1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade) • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Programmable CAS Latency : 2,3 clocks • All inputs and outputs referenced to the positive edge of the system clock • Data mask function by DQM • Internal 4 banks operation • Burst Read Single Write operation • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperatu. |
Datasheet |
IS45VM16160M Data Sheet
PDF 932.15KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IS45VM16160E |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM | |
2 | IS45VM16200D |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM | |
3 | IS45VM16800E |
ISSI |
128Mb Mobile Synchronous DRAM | |
4 | IS45VM32100D |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM | |
5 | IS45VM32160D |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM | |
6 | IS45VM32160E |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM | |
7 | IS45VM32200M |
ISSI |
512K x 32Bits x 4Banks Mobile Synchronous DRAM | |
8 | IS45VM32400E |
ISSI |
128Mb Mobile Synchronous DRAM | |
9 | IS45VM32400G |
ISSI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM | |
10 | IS45VM32400H |
ISSI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM |