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IS45VM16160E |
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| Part Number | IS45VM16160E |
| Manufacturer | ISSI |
| Description | These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to. |
| Features |
JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 8K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. • Programmable CAS Latency : 2,3 clocks. • All inputs and outputs referenced to the positive edge of the system clock. • Data mask function by DQM. • Internal 4 banks operation. • Burst Read Single Write operation. • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self . |
| Datasheet |
 IS45VM16160E Data Sheet
PDF 554.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS45VM16160M |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM |
|
| 2 | IS45VM16200D |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM |
|
| 3 | IS45VM16800E |
ISSI |
128Mb Mobile Synchronous DRAM |
|
| 4 | IS45VM32100D |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM |
|
| 5 | IS45VM32160D |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM |
|
| 6 | IS45VM32160E |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM |
|
| 7 | IS45VM32200M |
ISSI |
512K x 32Bits x 4Banks Mobile Synchronous DRAM |
|
| 8 | IS45VM32400E |
ISSI |
128Mb Mobile Synchronous DRAM |
|
| 9 | IS45VM32400G |
ISSI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM |
|
| 10 | IS45VM32400H |
ISSI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM |
|
Desde 2024. D4U Semiconductor.
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