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IS43DR16640DL |
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| Part Number | IS43DR16640DL |
| Manufacturer | ISSI |
| Description | ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. ADDRESS TABLE Parameter 128M x 8 Configuration 16M x 8 x 8 banks Refresh Count 8K/64ms Row Addr. |
| Features |
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V • Low Voltage (L): Vdd and Vddq = 1.5V ±0.075V • SSTL_18-compatible for Standard Voltage • SSTL_15-compatible for Low Voltage • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 8 internal banks for concurrent operation • Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup- ported • Programmable CAS latency (CL) 3, 4, 5, 6, 7, 8 and 9 supported • Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 an. |
| Datasheet |
 IS43DR16640DL Data Sheet
PDF 844.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS43DR16640D |
ISSI |
64Mx16 DDR2 DRAM |
|
| 2 | IS43DR16640B |
ISSI |
1Gb DDR2 SDRAM |
|
| 3 | IS43DR16640BL |
ISSI |
1Gb DDR2 SDRAM |
|
| 4 | IS43DR16640C |
ISSI |
DDR2 DRAM |
|
| 5 | IS43DR16128C |
ISSI |
DDR2 DRAM |
|
| 6 | IS43DR16160B |
ISSI |
DDR2 DRAM |
|
| 7 | IS43DR16320B |
ISSI |
512Mb DDR2 SDRAM |
|
| 8 | IS43DR16320D |
ISSI |
DDR2 DRAM |
|
| 9 | IS43DR16320E |
ISSI |
DDR2 DRAM |
|
| 10 | IS43DR32160C |
ISSI |
16Mx32 512Mb DDR2 DRAM |
|
Desde 2024. D4U Semiconductor.
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