IS43DR32160C |
Part Number | IS43DR32160C |
Manufacturer | ISSI |
Description | ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. The 512Mb DDR2 SDRAM is provided in a wide bus x32 format, designed to offer a smaller footprint and. |
Features |
• Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS) • 4-bit prefetch architecture • On chip DLL to align DQ and DQS transitions with CK • 4 internal banks for concurrent operation • Programmable CAS latency (CL) 3, 4, 5, and 6 supported • Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported • WRITE latency = READ latency - 1 tCK • Programmable burst lengths: 4 or 8 • Adjustable data-output drive strength, full and reduce. |
Datasheet |
IS43DR32160C Data Sheet
PDF 706.28KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IS43DR32800A |
ISSI |
8Mx32 256Mb DDR2 DRAM | |
2 | IS43DR32801A |
ISSI |
8Mx32 256Mb DDR2 DRAM | |
3 | IS43DR32801B |
ISSI |
256Mb DDR2 DRAM | |
4 | IS43DR16128C |
ISSI |
DDR2 DRAM | |
5 | IS43DR16160B |
ISSI |
DDR2 DRAM | |
6 | IS43DR16320B |
ISSI |
512Mb DDR2 SDRAM | |
7 | IS43DR16320D |
ISSI |
DDR2 DRAM | |
8 | IS43DR16320E |
ISSI |
DDR2 DRAM | |
9 | IS43DR16640B |
ISSI |
1Gb DDR2 SDRAM | |
10 | IS43DR16640BL |
ISSI |
1Gb DDR2 SDRAM |