Part Number | IRLR024N |
Distributor | Stock | Price | Buy |
---|
Part Number | IRLR024N |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25. |
Features |
·Static drain-source on-resistance: RDS(on)≤65mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 72 . |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRLR024 |
International Rectifier |
(IRLU/R024) Power MOSFET | |
2 | IRLR024 |
Samsung Electronics |
N-Channel MOSFET | |
3 | IRLR024 |
Vishay |
Power MOSFET | |
4 | IRLR024NPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLR024PBF |
International Rectifier |
HEXFET POWER MOSFET | |
6 | IRLR024Z |
International Rectifier |
Power MOSFET | |
7 | IRLR024ZPbF |
International Rectifier |
Power MOSFET | |
8 | IRLR020 |
Samsung Electronics |
N-Channel MOSFET | |
9 | IRLR014 |
International Rectifier |
HEXFET POWER MOSFET | |
10 | IRLR014 |
Vishay Siliconix |
Power MOSFET |