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IRLR024N |
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| Part Number | IRLR024N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev... |
| Features |
·Static drain-source on-resistance: RDS(on)≤65mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-... |
| Document |
 IRLR024N Data Sheet
PDF 236.98KB |
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Desde 2024. D4U Semiconductor.
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