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| Part Number | IRLML6401 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRLML6401 |
| Manufacturer | Kexin |
| Title | P-Channel Enhancement MOSFET |
| Description | SMD Type P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) MOSFET ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching. +0.12.4 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 - 0.1 +0.10.97 -0.1 +1.3 0.1 - 0.1 0.55 0.4 Unit: m. |
| Features |
● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching. +0.12.4 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 - 0.1 +0.10.97 -0.1 +1.3 0.1 - 0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolraleicntor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu. |
| Part Number | IRLML6401 |
| Manufacturer | International Rectifier |
| Title | HEXFET Power MOSFET |
| Description | These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer . |
| Features | in application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power D. |
| Part Number | IRLML6401 |
| Manufacturer | HOTTECH |
| Title | Power MOSFET |
| Description | Plastic-Encapsulate Mosfets IRLML6401 l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l 1.8V Gate Rated l Lead-Free l Halogen-Free l Marking: 1F * 6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLML6401PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRLML6402 |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRLML6402 |
Kexin |
P-Channel MOSFET |
|
| 4 | IRLML6402 |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRLML6402PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRLML6244PbF |
International Rectifier |
Power MOSFET |
|
| 7 | IRLML6244TRPbF |
International Rectifier |
Power MOSFET |
|
| 8 | IRLML6246TRPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRLML6302 |
International Rectifier |
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|
| 10 | IRLML6302 |
INCHANGE |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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