IRLML6401 |
Part Number | IRLML6401 |
Manufacturer | International Rectifier |
Description | These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee... |
Features |
in application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Micro3
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -4.3 -3.4 -34 1.3 0.8 0.01 33 ± 8.0 -55 to +... |
Document |
IRLML6401 Data Sheet
PDF 142.08KB |
Similar Datasheet
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