IRLML6401 International Rectifier HEXFET Power MOSFET Datasheet. existencias, precio

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IRLML6401

International Rectifier
IRLML6401
IRLML6401 IRLML6401
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Part Number IRLML6401
Manufacturer International Rectifier
Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Features in application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3  Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy „ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 ± 8.0 -55 to +...

Document Datasheet IRLML6401 Data Sheet
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