IRLIZ34G Datasheet. existencias, precio

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IRLIZ34G POWER MOSFET


IRLIZ34G
Part Number IRLIZ34G
Distributor Stock Price Buy
Vishay
IRLIZ34G
Part Number IRLIZ34G
Manufacturer Vishay
Title Power MOSFET
Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.
Features
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS*
• Sink to Lead Creepage Distance 4.8 mm COMPLIANT
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ru.
INCHANGE
IRLIZ34G
Part Number IRLIZ34G
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRLIZ34G ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=5V ·Enhancement mode: Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching V.
Features
·Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=5V
·Enhancement mode: Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±10 .

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