IRLIZ34G |
Part Number | IRLIZ34G |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor IRLIZ34G ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=5V ·Enhancement mode: Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum ... |
Features |
·Low drain-source on-resistance: RDS(ON) ≤50mΩ @VGS=5V ·Enhancement mode: Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±10 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation @TC=25℃ 42 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -5... |
Document |
IRLIZ34G Data Sheet
PDF 270.06KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRLIZ34G |
International Rectifier |
POWER MOSFET | |
2 | IRLIZ34G |
Vishay |
Power MOSFET | |
3 | IRLIZ34N |
International Rectifier |
POWER MOSFET | |
4 | IRLIZ34NPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLIZ34NPbF |
Infineon |
Power MOSFET | |
6 | IRLIZ14G |
International Rectifier |
POWER MOSFET |