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IRGP4630DPbF Insulated Gate Bipolar Transistor


IRGP4630DPbF
Part Number IRGP4630DPbF
Distributor Stock Price Buy
Infineon
IRGP4630DPbf
Part Number IRGP4630DPbf
Manufacturer Infineon
Title IGBT
Description VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C.
Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient of parameters and tight distribution Excellent current sharing in parallel operation 5µs .

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