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IRGP4630DPbF |
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| Part Number | IRGP4630DPbF |
| Manufacturer | International Rectifier |
| Description | IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1... |
| Features |
G Gate
C Collector
Benefits
E Emitter
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and high power capability
Positive VCE (ON) temperature coefficient of parameters
and
tight
distribution
Excellent current
sharing
in parallel operation
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
IRGS4630DPbF
IRGB4630DPbF IRGP4630DPbF IRGP4630D-EP... |
| Document |
 IRGP4630DPbF Data Sheet
PDF 1.20MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGP4630DPbf |
Infineon |
IGBT |
|
| 2 | IRGP4630D-EPbf |
Infineon |
IGBT |
|
| 3 | IRGP4630-EDPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 4 | IRGP4620D-EPbF |
Infineon |
IGBT |
|
| 5 | IRGP4640-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGP4640D-EPbF |
Infineon |
Insulated Gate Bipolar Transistor |
|
Desde 2024. D4U Semiconductor.
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