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IRFZ45 |
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| Part Number | IRFZ45 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB. |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V . |
| Datasheet |
 IRFZ45 Data Sheet
PDF 244.33KB |
| Distributor | Stock | Price | Buy |
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IRFZ45 |
| Part Number | IRFZ45 |
| Manufacturer | Samsung Electronics |
| Title | N-Channel Power MOSFETS |
| Description | . |
| Features | . |
IRFZ45 |
| Part Number | IRFZ45 |
| Manufacturer | ART CHIP |
| Title | N-CHANNEL POWER MOSFETS |
| Description | IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY P. |
| Features | Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY Part Number VDS IRFZ44 60V RDS(on) 0.028Ω ID 35A IRFZ45 60V 0.035Ω 35A IRFZ40 50V 0.028Ω 35A IRFZ42 50V 0.035Ω 35A *Current limited by. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFZ40 |
Samsung Electronics |
N-Channel Power MOSFETS |
|
| 3 | IRFZ40 |
Motorola Semiconductor |
Power Field Effect Transistors |
|
| 4 | IRFZ40 |
STMicroelectronics |
N-Channel Power MOS Transistors |
|
| 5 | IRFZ40 |
Vishay |
Power MOSFET |
|
| 6 | IRFZ40 |
ART CHIP |
N-CHANNEL POWER MOSFETS |
|
| 7 | IRFZ40FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 8 | IRFZ40FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRFZ42 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistors |
|
| 10 | IRFZ42 |
Samsung Electronics |
N-Channel Power MOSFETS |
|
Desde 2024. D4U Semiconductor.
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