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| Part Number | IRFU420 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFU420 |
| Manufacturer | IRF |
| Title | Power MOSFET |
| Description | . |
| Features | . |
| Part Number | IRFU420 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFETs |
| Description | www.DataSheet4U.com IRFR420, IRFU420 Data Sheet July 1999 File Number 2411.3 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified leve. |
| Features |
• 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR420 IRFU420 PACKAGE TO-252AA TO-251AA BRAND IRFR420 IRFU420 Symbol D G NO. |
| Part Number | IRFU420 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 2.4 A IDM Drain Current-Single Pluse . |
| Features |
·Drain Current –ID= 2.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V. |
| Part Number | IRFU420 |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | Data Sheet IRFR420, IRFU420 January 2002 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc. |
| Features |
• 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-252AA GATE DRAIN (FLANGE) DRAIN SOURCE ©2002 Fairchild Semiconductor Corporation I. |
| Part Number | IRFU420 |
| Manufacturer | Intersil |
| Title | N-Channel Power MOSFETs |
| Description | IRFR420, IRFU420 Data Sheet July 1999 File Number 2411.3 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the br. |
| Features |
• 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR420 IRFU420 PACKAGE TO-252AA TO-251AA BRAND IRFR420 IRFU420 Symbol D G NO. |
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