IRFU420 |
Part Number | IRFU420 |
Manufacturer | Fairchild Semiconductor |
Description | Data Sheet IRFR420, IRFU420 January 2002 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFE... |
Features |
• 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-252AA GATE DRAIN (FLANGE) DRAIN SOURCE ©2002 Fairchild Semiconductor Corporation IRFR420, IRFU420 Rev. B IRFR420, IRFU420 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR420, IRFU420 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . ... |
Document |
IRFU420 Data Sheet
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