Part Number | IRFD213 |
Distributor | Stock | Price | Buy |
---|
Part Number | IRFD213 |
Manufacturer | Siliconix |
Title | N-Channel Transistor |
Description | . |
Features | . |
Part Number | IRFD213 |
Manufacturer | IOR |
Title | N-Channel Transistor |
Description | . |
Features | . |
Part Number | IRFD213 |
Manufacturer | GE |
Title | FIELD EFFECT POWER TRANSISTOR |
Description | ~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been opt. |
Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIMENSIONS. |
Part Number | IRFD213 |
Manufacturer | Harris |
Title | N-Channel Power MOSFET |
Description | . |
Features | . |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFD210 |
Intersil Corporation |
N-Channel Power MOSFET | |
2 | IRFD210 |
International Rectifier |
Power MOSFET | |
3 | IRFD210 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
4 | IRFD210PBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRFD211 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
6 | IRFD212 |
GE |
FIELD EFFECT POWER TRANSISTOR | |
7 | IRFD214 |
International Rectifier |
Power MOSFET | |
8 | IRFD214 |
Vishay |
Power MOSFET | |
9 | IRFD220 |
Intersil Corporation |
N-Channel Power MOSFET | |
10 | IRFD220 |
International Rectifier |
Power MOSFET |