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IRFD213 |
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| Part Number | IRFD213 |
| Manufacturer | GE |
| Description | ~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to ... |
| Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIMENSIONS... |
| Document |
 IRFD213 Data Sheet
PDF 179.97KB |
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Desde 2024. D4U Semiconductor.
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