IRFBF30 Datasheet. existencias, precio

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IRFBF30 Power MOSFET


IRFBF30
Part Number IRFBF30
Distributor Stock Price Buy
Vishay
IRFBF30
Part Number IRFBF30
Manufacturer Vishay
Title Power MOSFET
Description Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation levels to approxim.
Features
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is unive.
INCHANGE
IRFBF30
Part Number IRFBF30
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRFBF30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage .
Features
·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX)
·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±20 V ID.

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