Part Number | IRFBF30 |
Distributor | Stock | Price | Buy |
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Part Number | IRFBF30 |
Manufacturer | Vishay |
Title | Power MOSFET |
Description | Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation levels to approxim. |
Features |
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is unive. |
Part Number | IRFBF30 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | iscN-Channel MOSFET Transistor IRFBF30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage . |
Features |
·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±20 V ID. |
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