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IRFBF30 |
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| Part Number | IRFBF30 |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFBF30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pulsed 14 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~1... |
| Document |
 IRFBF30 Data Sheet
PDF 279.86KB |
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Desde 2024. D4U Semiconductor.
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