Part Number | IRFBC20 |
Distributor | Stock | Price | Buy |
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Part Number | IRFBC20 |
Manufacturer | International Rectifier |
Title | Power MOSFET |
Description | . |
Features | . |
Part Number | IRFBC20 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | iscN-Channel MOSFET Transistor IRFBC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage. |
Features |
·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V I. |
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