Part Number | IRF742 |
Distributor | Stock | Price | Buy |
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Part Number | IRF742 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,. |
Features |
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF742
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDS. |
Part Number | IRF742 |
Manufacturer | ART CHIP |
Title | N-Channel Power MOSFETs |
Description | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(o. |
Features | . |
Part Number | IRF742 |
Manufacturer | GE |
Title | FIELD EFFECT POWER TRANSISTOR |
Description | ~D~[F~lf FIELD EFFECT POWER TRANSISTOR IRF742,743 SAMPERES 400, 350 VOLTS ROS(ON) =O.SO n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimiz. |
Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE TO-220AB DIMENSIONS ARE IN . |
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